The global gallium nitride device market was valued at USD 20.56 billion in 2019 and is expected to grow from USD 21.18 billion in 2020 to USD 39.74 billion by 2032, reflecting a compound annual growth rate (CAGR) of 5.20% from 2020 to 2032. In 2019, North America led the market with a 35.89% share.

The gallium nitride (GaN) device market is experiencing robust growth due to the increasing demand for high-performance semiconductor solutions in industries such as telecommunications, consumer electronics, automotive, and renewable energy. GaN devices offer superior efficiency, high power density, and fast switching capabilities compared to traditional silicon-based semiconductors, making them ideal for applications like power electronics, RF devices, and LED lighting. The market's expansion is driven by the rise in electric vehicle adoption, renewable energy projects, and advancements in 5G technology, all of which require efficient power conversion and management. North America holds a significant share of the market, owing to technological innovations and the presence of key players in the region. As demand for energy-efficient and compact devices continues to rise, the GaN device market is expected to witness steady growth, with ongoing advancements in material science and manufacturing processes enhancing the performance and affordability of GaN-based products.

A list of all the prominent gallium nitride device manufacturers present in the global market:

• Cree, Inc. (The U.S.)
• Infineon Technologies AG (Germany)
• Efficient Power Conversion Corporation. (The U.S.)
• EPISTAR Corporation (Taiwan)
• GaN Systems (Canada)
• MACOM (The U.S.)
• Microsemi (The U.S.)
• Mitsubishi Electric Corporation (Japan)
• NICHIA CORPORATION (Japan)
• Northrop Grumman Corporation (The U.S.)
• NXP Semiconductors. (Netherland)
• Qorvo, Inc (The U.S.)
• Texas Instruments Incorporated. (The U.S.)
• Toshiba Corporation (Japan)

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