The global Gallium Nitride (GaN) Devices Market reached USD 20.56 billion in 2019 and is anticipated to grow steadily. It is expected to rise from USD 21.18 billion in 2020 to USD 28.40 billion by 2027, with a compound annual growth rate (CAGR) of 4.28% during the period of 2024-2027.

Gallium Nitride (GaN) is a leading-edge semiconductor device known for its advanced capabilities. It is highly suitable for high-power transistors, excelling particularly in high-temperature environments. GaN-based devices offer several advantages, including large electric fields, enhanced energy efficiency, elevated saturation velocity, impressive breakdown voltage, and superior thermal conduction capabilities.

In February 2020, STMicroelectronics and Taiwan Semiconductor Manufacturing Company joined forces to accelerate the development of GaN process technology. This collaboration aims to improve the availability of integrated and discrete GaN-based products, fostering further growth in the GaN device market.

Browse Report:

https://www.fortunebusinessinsights.com/gallium-nitride-gan-devices-market-103367

Key Players: Gallium Nitride Device Market

The report profiles the key players operating in the Gallium Nitride Device Market, including industry leaders and emerging players. These players have been analyzed based on their market share, product portfolio, business strategies, and recent developments. The key players in the market include:

• Cree, Inc. (The U.S.)
• Infineon Technologies AG (Germany)
• Efficient Power Conversion Corporation. (The U.S.)
• Epistar Corporation (Taiwan)
• GaN Systems (Canada)
• Macom (The U.S.)
• Microsemi (The U.S.)
• Mitsubishi Electric Corporation (Japan)
• Nichia Corporation (Japan)
• Northrop Grumman Corporation (The U.S.)
• Nxp Semiconductors. (Netherland)