The global gallium nitride device market was valued at USD 20.56 billion in 2019 and is expected to grow to USD 39.74 billion by 2032, rising from USD 21.18 billion in 2020 at a compound annual growth rate (CAGR) of 5.20% during the forecast period (2020–2032).

In 2019, North America led the market, accounting for 35.89% of global revenue, driven by advanced R&D initiatives and high rates of technology adoption. The market’s consistent growth is fueled by increasing demand from key sectors such as telecommunications, automotive, and consumer electronics.

A list of all the prominent Gallium Nitride Device Market Key Players:

• Infineon Technologies AG (Germany)
• Efficient Power Conversion Corporation. (The U.S.)
• EPISTAR Corporation (Taiwan)
• GaN Systems (Canada)
• MACOM (The U.S.)
• Microsemi (The U.S.)
• Mitsubishi Electric Corporation (Japan)
• NICHIA CORPORATION (Japan)
• Northrop Grumman Corporation (The U.S.)
• NXP Semiconductors. (Netherland)
• Qorvo, Inc (The U.S.)
• Texas Instruments Incorporated. (The U.S.)
• Toshiba Corporation (Japan)

Get A Free Sample PDF:

https://www.fortunebusinessinsights.com/enquiry/request-sample-pdf/gallium-nitride-gan-devices-market-103367